Directly drowning a pattern image on a substrate plate is possible by employing their original high speed imaging method “Point Array”.
- Direct imaging exposure is applicable to experimentation, research, prototype, small-lot production, or etc.
- Applicaple to products such as semiconductors, electronic components, high-end PCB, high-density packaging, MEMS and FPDs.
- No photomask is needed in the lithography process, which minimizes development cost and time lag to the market.
- Also, custom system composition is available to meet the customers’ requests.
|Minimum line width (※1)||[μm]||5||3||2||1|
|Maximum substrate size||[mm]||200 x 200||200 x 200||100 x 100|
|Effective exposure area||[mm]||200 x 200||200 x 200||100 x 100|
|Peak wave length||[nm]||405||375||405 + 375||405||375||375|
|Tact time||[s,min]||180 [s]||320 [s]||16 [min]||27 [min]|
|Maximum exposure||[mJ/c㎡]||245||70||245 + 70||460||135||50||100|
※1 Value varies according to the conditions (Ex. photo-resist,film thickness, and development conditions)
※2 The alignment time is excluded.
※3 Under the maximum scanning speed.